Power MOS FET with carrier lifetime killer

Details Power MOS FET with carrier lifetime killer Power MOS FET with carrier lifetime killer

1987-12-22

1989-08-08

Hille, Rolf

357 58, 357 63, 357 91, H01L 2978

Patent

active

048557994

ABSTRACT:
In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.

REFERENCES:
patent: 4466176 (1984-08-01), Temple
patent: 4620211 (1986-10-01), Baliga et al.
patent: 4630084 (1986-12-01), Tihanyi
patent: 4656493 (1987-04-01), Adler et al.

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