Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-01-04
2005-01-04
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S202000, C257S206000
Reexamination Certificate
active
06838711
ABSTRACT:
In a MOS array, current loss at distances further away from the drain and source contacts is compensated for by adjusting the length of the polygate. In an array with drain and source contacts near the middle of the structure, the length of the polygate tapers off along the width of the polygate towards both ends of the polygate.
REFERENCES:
patent: 4636979 (1987-01-01), Donoghue
patent: 6639575 (2003-10-01), Tsunashima et al.
patent: 62002666 (1987-01-01), None
Drury Rob
Hopper Peter J.
Lindorfer Philipp
Vashchenko Vludislav
National Semiconductor Corporation
Vollrath Jurgen
Wilson Allan R.
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