Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-10-26
2011-10-25
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S703000, C257S401000, C257S706000, C257S771000
Reexamination Certificate
active
08044500
ABSTRACT:
Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.
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Ishizuka Hiroya
Kitahara Takeshi
Kuromitsu Yoshirou
Watanabe Tomoyuki
Leason Ellis LLP
Luu Chuong A.
Mitsubishi Materials Corporation
Toyota Jidosha & Kabushiki Kaisha
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