Power module package for high frequency switching system

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

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Details

C257S713000, C257S717000, C257S675000

Reexamination Certificate

active

06849943

ABSTRACT:
A heat sink with fins has a flat, planar surface soldered to a metallic layer at one surface of a flat, planar ceramic layer. The opposite surface of the ceramic layer has a metallic pattern including base areas for high power, high frequency load switching MOSFETs. Lead frames are soldered between the lead frame base areas and base contact areas of the MOSFET packages. Thermal conduction between the MOSFETs and the heat sink dissipates the heat from switching losses. A gate drive circuit board for the load switching system is supported spaced from the and is separated from the MOSFETs by a thermally blocking air gap, with the component side of the gate drive circuit board facing away from the MOSFETs. Spade terminals of the lead frames extend through openings in the gate drive circuit board to route high power signals independently of the gate driver circuit board.

REFERENCES:
patent: 5045774 (1991-09-01), Bromberg
patent: 5424618 (1995-06-01), Bertenshaw et al.
patent: 5500575 (1996-03-01), Ionescu
patent: 5714847 (1998-02-01), Lindauer et al.
patent: 5770928 (1998-06-01), Chansky et al.
patent: 6690087 (2004-02-01), Kobayashi et al.
patent: 6707256 (2004-03-01), Brunker et al.

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