Power module assembly with reduced inductance

Details Power module assembly with reduced inductance Power module assembly with reduced inductance

2009-10-30

2011-12-13

Ha, Nathan (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

C257SE23169

Reexamination Certificate

active

08076696

ABSTRACT:
A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal can also be electrically coupled to the first conductive substrate, while a negative terminal can be electrically coupled to the second power semiconductor component, and an output terminal may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.

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