Power MESFET structure and fabrication process with high breakdo

Details Power MESFET structure and fabrication process with high breakdo Power MESFET structure and fabrication process with high breakdo

1995-03-08

1996-11-26

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 437175, 437912, H01L 21265, H01L 2144, H01L 21338

Patent

active

055785123

ABSTRACT:
The present invention comprises a metal semiconductor field effect transistor (MESFET) 100. The MESFET 100 comprises a semiconductor substrate 110 composed of gallium arsenide (GaAs) which has a top surface. This MESFET transistor 100 further comprises a contiguous first conductivity type source area 165, gate area 164, and drain area 170 disposed near the top surface on the semiconductor substrate 110, wherein the source and drain areas 165 and 170 respectively are of an equal relatively large depth from the top surface with high doping concentration. The gate area 164 is of a relatively small depth from the top surface. The gate area 164 is further disposed between and extending thereunto the source area 165 and the drain area 170. The gate area 164 further includes a current enhancement region 155 being doped with ions of the first conductivity with relatively lower concentration and extending between the gate area 164 and the source area 165. The current enhancement region 155 is a region of less depth from the top surface doped with a depletion implantation and an enhancement implantation. The gate area 164 further includes a breakdown prevention region doped with a depletion implantation which a relatively less ion concentration of the first conductivity. The breakdown prevention region extends between the gate area 160 and the drain area 170.

REFERENCES:
patent: 4694563 (1987-09-01), Kikuchi
patent: 4698899 (1987-10-01), Kakihana
patent: 4729372 (1988-03-01), L'Esperance, Jr.
patent: 4753899 (1988-06-01), Colquhoun
patent: 4941093 (1990-07-01), Marshall et al.

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