Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1994-01-06
1994-10-04
Gensler, Paul
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330305, 333 33, H03F 360
Patent
active
053529901
ABSTRACT:
In a power matching network which is used between a load and a transistor amplifier producing at its output end an amplified signal comprising a fundamental frequency signal and odd and even harmonic signals and comprises a matching circuit between the load and a line end, an open-end transmission line is connected to the output end and has a predetermined length shorter than a quarter wavelength of the fundamental frequency signal. An intermediate transmission line is connected between the output and the line ends and has a length of a quarter wavelength less the predetermined length. At least one open-end transmission line is connected to the line end and has a length of a quarter wavelength of the odd harmonic signal which is preferably composed of (2n+1)-th harmonic signals, where n represents integers starting at 1 and ending at a predetermined integer of at least 2. More preferably, the line end is connected to an additional transmission line which is either a 1/8 wavelength of the fundamental frequency signal long and has an end shorted for high frequency signals or is a 1/16 wavelength of the fundamental frequency signal long.
REFERENCES:
patent: 5270668 (1993-12-01), Ikeda et al.
Snider, David M. "A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier" IEEE Transactions on Electron Devices, vol. ED.-14, No. 12, Dec. 1967.
Gensler Paul
NEC Corporation
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