Power lasers with semiconductor filter

Details Power lasers with semiconductor filter Power lasers with semiconductor filter

1992-09-23

1995-01-24

Scott, Jr., Leon

Coherent light generators

Particular active media

Semiconductor

372 39, 372 98, H01S 318

Patent

active

053848012

ABSTRACT:
A laser is capable of working at a wavelength L.sub.2 from an active material capable of generating radiating emissions at at least two wavelengths L.sub.1 and L.sub.2, through the presence of a semiconductor plate in the laser cavity. Notably, the laser can generate wavelengths ranging from 1.4 .mu.m to 2 .mu.m, a range in which the optical damage threshold of the eye is high, from an Nd.sup.3+ doped YAG having numerous radiating emission wavelengths ranging from 0.946 .mu.m to 1.8 .mu.m.

REFERENCES:
patent: 4228349 (1980-10-01), Ettenberg et al.
patent: 4528464 (1985-07-01), Chemia et al.
patent: 4599728 (1986-07-01), Alani et al.
patent: 4857971 (1989-08-01), Burnham
D. Cotter, Optics Communications, vol. 43, No. 3, Oct. 1982, pp. 200-202. "High power single-frequency laser at 1.32 mum using Nd:YAG".

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