Power inverter having series connection of semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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Details

257146, 257104, 257378, 363 56, H01L 2974, H01L 31111, H01L 2976, H02H 7122

Patent

active

061440469

ABSTRACT:
An inverter apparatus constituted by one or more series connections of plural semiconductor devices each having a pair consisting of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer of the lowest impurity concentration in the diode is lower than that of the base layer of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from a conduction state to a blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of the blocking state.

REFERENCES:
patent: 5274541 (1993-12-01), Kimura et al.
patent: 5701018 (1997-12-01), Hanaoka et al.

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