Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-07-29
2000-11-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257104, 257378, 363 56, H01L 2974, H01L 31111, H01L 2976, H02H 7122
Patent
active
061440469
ABSTRACT:
An inverter apparatus constituted by one or more series connections of plural semiconductor devices each having a pair consisting of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer of the lowest impurity concentration in the diode is lower than that of the base layer of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from a conduction state to a blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of the blocking state.
REFERENCES:
patent: 5274541 (1993-12-01), Kimura et al.
patent: 5701018 (1997-12-01), Hanaoka et al.
Hanaoka Koumei
Mori Mutsuhiro
Sakurai Naoki
Hitachi , Ltd.
Loke Steven H.
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