Power integrated circuit ("PIC") structure with a vertical IGBT

Details Power integrated circuit ("PIC") structure with a vertical IGBT Power integrated circuit ("PIC") structure with a vertical IGBT

1995-05-17

1997-12-30

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257197, 257378, H01L 310328, H01L 2358, H01L 2976

Patent

active

057033854

ABSTRACT:
A PIC structure includes a lightly doped semiconductor layer of the first conductivity type superimposed over a heavily doped semiconductor substrate of a second conductivity type, wherein a Vertical IGBT and a driving and control circuit including at least first conductivity type-channel MOSFETs are integrated. The MOSFETs are provided inside well regions of the second conductivity type which are included in at least one lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer of the first conductivity type by means of a respective isolated region of a second conductivity type.

REFERENCES:
patent: 4001860 (1977-01-01), Cauge et al.
patent: 4072975 (1978-02-01), Ishitani
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4344081 (1982-08-01), Pao et al.
patent: 5500541 (1996-03-01), Terashima
Patent Abstracts of Japan, vol. 13, No. 243 (E-768) Jun. 7, 1989 & JP-A-01 045 159 Nissan Motor Co. Ltd.
3rd International Symposium on Power Semiconductor Devices and ICA, Apr. 1991, Baltimore, Maryland pp. 40-44, T. Mizoguchi et al. "600V, 25A Dieelectrically-Isolated Power IC with Vertical IGBT".
Patent Abstracts of Japan, vol. 13, No. 184 (E-751) Apr. 28, 1989 & JP-A-01 010 658 Nissan Motor Co. Ltd.
Patent Abstracts of Japan, vol. 14, No. 324 (E-951)(4267) Jul. 11, 1990 & JP-A-02 109 371 Hitachi Ltd.
Patent Abstracts of Japan, vo. 11, No. 376 (E-563)(2823) Dec. 8, 1987 & JP-A-62 143 450 Hitachi Ltd.
European Search Report for European Patent Application No. 94830230.2 filed May 19, 1994.

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