Power integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...

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257509, 257692, H01L 2900

Patent

active

060752777

ABSTRACT:
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

REFERENCES:
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patent: 3795846 (1974-03-01), Ogawa et al.
patent: 4158214 (1979-06-01), Bolus et al.
patent: 4278985 (1981-07-01), Stobbs
patent: 4286280 (1981-08-01), Sugawara
patent: 5365086 (1994-11-01), Pezzani
patent: 5401984 (1995-03-01), Byatt et al.
patent: 5627399 (1997-05-01), Fujii

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