Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1996-04-18
1999-11-23
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257370, 257371, H01L 2976, H01L 2994, H01L 2900
Patent
active
059905352
ABSTRACT:
A power integrated circuit including a substrate of semiconductor material having a first conductivity type on which is formed a first epitaxial layer of the same conductivity type. In a first portion of the first epitaxial layer are formed first and second diffused regions having respectively first and second conductivity type. The first and the second diffused regions are isolated from a power stage included partially in a second portion of the first epitaxial layer by an annular region having the second conductivity type. Over the first epitaxial layer is formed a second epitaxial layer having the first conductivity type in which are extended the first and the second diffused regions to permit forming a control circuitry for the power stage.
REFERENCES:
patent: 4814288 (1989-03-01), Kimura et al.
patent: 5602416 (1997-02-01), Zambrano
Carlson David V.
Fahmy Wael
SGS-Thomson Microelectronics S.R.L.
Stewart John C.
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