Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Patent
1995-03-16
1997-08-26
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
257668, 257691, 257725, 257728, H01L 2334
Patent
active
056613431
ABSTRACT:
An input-output wiring for the power circuit and a ground layer are formed on a metal substrate of a power hybrid integrated circuit apparatus. A plurality of windows are opened at predetermined positions of a circuit substrate to which electronic parts such as an IC driver, a chip resistor etc. are connected. Ceramic chips are soldered on the exposed surface of the metal substrate in the windows, and the power semiconductor elements are connected through metal bridges on the ceramic chips. Connection between lower electrode of adjoining power semiconductor elements or between lower part of the power semiconductor element and an input/output wiring is made by means of a part of the metal bridge.
REFERENCES:
patent: 5198963 (1993-03-01), Gupta et al.
patent: 5206712 (1993-04-01), Kornrumpf et al.
patent: 5291065 (1994-03-01), Arai et al.
patent: 5424579 (1995-06-01), Arai et al.
Kato Kazuo
Miyazaki Hideki
Takahashi Masaaki
Yamada Kazuji
Arroyo T. M.
Hitachi , Ltd.
Saadat Mahshid D.
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