Power ground metallization routing in a semiconductor device

Details Power ground metallization routing in a semiconductor device Power ground metallization routing in a semiconductor device

1997-12-02

1999-11-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular power supply distribution means

257211, H01L 2710

Patent

active

059819871

ABSTRACT:
A semiconductor device and a method of laying out the same includes routing primary power and ground distributions in the second metallization layer, rather than the first metallization as is conventionally done. This improves routability in the first metallization layer while providing sufficient current handling ability in the power and ground distributions.

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patent: 4928160 (1999-05-01), Crafts
patent: 5237184 (1993-08-01), Yonemaru et al.
patent: 5565758 (1996-10-01), Yoeli et al.
patent: 5635737 (1997-06-01), Yin
patent: 5656834 (1997-08-01), Grzyb et al.

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