Power GaAs FET having internal matching circuit

Details Power GaAs FET having internal matching circuit Power GaAs FET having internal matching circuit

1995-02-22

1996-06-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

257786, H01L 23544

Patent

active

055258417

ABSTRACT:
A semiconductor device having a combining/distributing circuit includes a bonding region, an external lead, and an alignment marker provided to the combining/distributing circuit. The bonding region includes a predetermined high frequency branching point of the combining/distributing circuit. The external lead is coupled to the bonding region by bonding wires. The alignment marker makes a precise alignment between the bonding region and the external lead. The marker may be in the form of two slits which are provided at a corresponding edge portion of the bonding region of the combining/distributing circuit and which are spaced with each other in a distance corresponding to the width of the external lead. The precise alignment between the bonding region and the external lead eliminates a possibility of the occurrence of phase rotation resulting in the enhancement of output power characteristics and yield of products.

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