Power field effect devices having small cell size and low contac

Details Power field effect devices having small cell size and low contac Power field effect devices having small cell size and low contac

1989-04-13

1991-03-05

Mintel, William

357 86, 357 59, 357 67, H01L 0000

Patent

active

049981510

ABSTRACT:
A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.

REFERENCES:
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4714951 (1987-12-01), Baudrant et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4890142 (1989-12-01), Tonnel et al.
patent: 4903189 (1990-02-01), Ngo et al.
patent: 4908682 (1990-03-01), Takahashi
Sequeda, "The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication," Journal of Metals, Nov. 1985, pp. 54-59.
Ho et al., "Self-Aligned Process for Forming Metal-Silicide and Polysilicon Composite Base Contact," IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980, pp. 5336-5338.

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