Power driver circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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Details

327428, 327443, 327445, 327108, 327582, H03K 17687, H03K 1772, H03K 300

Patent

active

055044492

ABSTRACT:
A power driver circuit for turning a semiconductor switching device on and off in response to receipt of a control signal includes a trigger circuit that turns on a latching switch at a speed that is independent of the rate of change of the control signal. The trigger circuit is responsive to the control signal to apply a current from the semiconductor switching device to the latching switch. A high speed SCR may be used as the latching switch and may be triggered by a small trigger current from the gate of the semiconductor switching device fed to both the anode and cathode gates of the SCR. High speed diodes may also be used to increase the speed of the circuit. The power driver circuit improves the efficiency of the semiconductor switching device by decreasing the time the switching device spends in transition its two steady states.

REFERENCES:
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4492883 (1985-01-01), Janutka
patent: 4694206 (1987-09-01), Weinberg
patent: 4912335 (1990-03-01), Ehalt et al.
patent: 4979011 (1990-12-01), Prentice
patent: 4992683 (1991-02-01), Robin, Jr.
patent: 5045709 (1991-09-01), Ogawa
patent: 5086242 (1992-02-01), Heilman et al.
Prentice et al, "High Frequency, Low Cost Gate Drive Integrated Circuit", Technical Papers of the Sixth International High Frequency Power Conversion Conference, Jun. 9-14, 1991, Toronto, Ontario, Canada, pp. 1-9.

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