Power down circuit for high output impedance state of I/O...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Particular stable state circuit

Reexamination Certificate

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Details

C327S143000, C327S537000, C326S058000, C326S081000

Reexamination Certificate

active

06597222

ABSTRACT:

CROSS-REFERENCES TO RELATED APPLICATIONS
NOT APPLICABLE
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
NOT APPLICABLE
REFERENCE TO A “SEQUENCE LISTING,” A TABLE, OR A COMPUTER PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACT DISK
NOT APPLICABLE
BACKGROUND OF THE INVENTION
The present invention relates to output drivers, and in particular to multiple output drivers connected together in a telecommunication system when power to one output driver is down.
FIG. 1
illustrates output drivers (input/output drivers) in a first semiconductor chip
12
and second semiconductor chip
14
. Alternately, the drivers can be on the same chip using different VDDs. Chip
12
includes a PMOS transistor
16
and an NMOS transistor
18
connected to an output line
20
. PMOS transistor
16
is connected to the positive output (INP
1
) of a signal while NMOS transistor
18
is connected to a negative output (INN
1
).
Similarly, chip
14
includes a PMOS transistor
22
and an NMOS transistor
24
for driving output line
26
. In one configuration, output lines
20
and
26
are connected together to provide a common output line
28
.
A problem of signal amplitude deterioration arises when the power supply of either output driver fails and is off. In such a situation, when chip
14
drives output line
28
to a high state, a high voltage is also applied to output line
20
of chip
12
. This will forward bias the P+
-well diode of PMOS transistor
16
if the power supply VD
1
is low. This affects the signal amplitude that chip
14
can drive to output line
28
.
BRIEF SUMMARY OF THE INVENTION
The present invention provides a circuit for putting an output driver into a high impedance state upon failure of the power supply. This is accomplished by providing a first transistor that is connected between the power supply and the n-well to charge the n-well potential of all the PMOS devices up to VDD. Upon failure of the supply voltage, a number of transistors are connected to couple the charged-up n-well and a gate of the PMOS drive transistor to the output line, so that they track the voltage level of the output, thereby preventing forward biasing of the P+
-well diode.
In one embodiment, the transistors include a transistor for connecting the n-well to the output line, the transistor being activated by a low power supply voltage. A switch (NMOS) transistor is provided to isolate the gate of the PMOS drive transistor from its input signal upon a low power supply. An additional two (PMOS) transistors, both activated by a low power supply, are used to couple the gates of the PMOS drive transistor and the transfer gate transistor to the output line, so that they track the voltage levels of the output line.
For a further understanding of the nature and advantages of the invention, reference should be made to the following description taken in conjunction with the accompanying drawings.


REFERENCES:
patent: 5450025 (1995-09-01), Shay
patent: 5661414 (1997-08-01), Shigehara et al.
patent: 5867039 (1999-02-01), Golke
patent: 6351158 (2002-02-01), Shearon et al.

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