Power distribution system built-in self test using on-chip...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Reexamination Certificate

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07138815

ABSTRACT:
A packaged semiconductor device uses built-in self test to characterize voltage between points within the semiconductor die during a current discontinuity generated in the semiconductor die. The semiconductor die is operated to generate a current discontinuity, or several sequential current discontinuities, and the voltage is measured with an on-chip ADC. Measuring the voltage within the semiconductor die, rather than measuring at external test points, provides a more accurate prediction of device operation. Multiple test points are measured using a multiplexer, multiple ADCs, or by reconfiguring an FPGA. Impedance versus frequency information of the greater power distribution system connected to the semiconductor die is obtained by transforming the voltage and current through the semiconductor die measured during a current discontinuity.

REFERENCES:
patent: 5285151 (1994-02-01), Akama et al.
patent: 5305003 (1994-04-01), Han et al.
patent: 6768952 (2004-07-01), Kantorovich et al.
patent: 6847222 (2005-01-01), Muraya et al.
patent: 2002/0149972 (2002-10-01), Lamb et al.
patent: 2001 085622 (2001-03-01), None
Isaac Kantorovich et al.; “Measurement of Milliohms of Impedance at Hundred MHz on Chip Power Slupply Loop”; Copyright 2002 IEEE; EPEP Proceedings; pp. 319-322.

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