Active solid-state devices (e.g. – transistors – solid-state diode – Conductivity modulation device
Patent
1993-01-19
1998-06-30
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Conductivity modulation device
257594, 257653, 257654, 257657, H01L 2358
Patent
active
057738580
ABSTRACT:
A power diode includes at least one semiconductor body having an inner zone f a first conductivity type and a given doping level, a cathode zone of the first conductivity type and a doping level higher than the given doping level, and an anode zone of a second conductivity type opposite the first conductivity type and a doping level higher than the given doping level. The inner zone has at least a first region with a first predetermined thickness being dimensioned for a required blocking voltage and a second region with a second thickness being greater than the first predetermined thickness by at least a factor of 1.4. The area and/or the minority carrier life of first and second partial diodes is dimensioned for causing a current flowing through the first partial diode in a conductive phase to be greater than a current flowing through the second partial diode by at least a factor of 2.
REFERENCES:
patent: 4587547 (1986-05-01), Amemiya et al.
patent: 5063428 (1991-11-01), Schlaugenotto et al.
Kaussen Franz
Schlangenotto Heinrich
Sommer Karl-Heinz
Eupec Europaeische Gesellschaft fuer Leistungshalbleiter mbH & C
Greenberg Laurence A.
Hardy David B.
Lerner Herbert L.
Thomas Tom
LandOfFree
Power diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1862737