Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2008-08-20
2010-12-07
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C257S676000, C257S706000, C257S723000, C257SE23031, C257SE23141, C438S121000, C438S122000
Reexamination Certificate
active
07846779
ABSTRACT:
Provided are a power device package, which can be made compact by mounting semiconductor chips in recesses formed in a substrate and improve operational reliability by rapidly dissipating heat generated during operation to the outside, and a method of fabricating the power device package. The power device package includes: a substrate having a first surface and a second surface opposite to each other, and one or more recesses formed in the first surface; a wiring pattern formed on the first surface of the substrate; one or more power semiconductor chips placed in the recesses and electrically connected to the wiring pattern; a lead frame electrically connected to the wiring pattern; one or more control semiconductor chips electrically connected to the power semiconductor chips to control the power semiconductor chips; and an optional sealing member sealing the substrate, the wiring pattern, the power semiconductor chips, the control semiconductor chips, and at least a part of the lead frame so as to expose the second surface of the substrate.
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Fairchild Korea
Semiconductor Ltd.
Thai Luan C
Townsend and Townsend / and Crew LLP
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