Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode
Reexamination Certificate
2006-07-04
2006-07-04
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
C257S481000
Reexamination Certificate
active
07071537
ABSTRACT:
A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.
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Kelberlau Ulrich
Zommer Nathan
I-XYS Corporation
Pizarro-Crespo Marcos D.
Townsend and Townsend / and Crew LLP
Weiss Howard
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