Power device having electrodes on a top surface thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode

Reexamination Certificate

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C257S481000

Reexamination Certificate

active

07071537

ABSTRACT:
A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.

REFERENCES:
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patent: 5286995 (1994-02-01), Malhi
patent: 5323041 (1994-06-01), Matsushita et al.
patent: 5583365 (1996-12-01), Villa et al.
patent: 5897355 (1999-04-01), Bulucea et al.
patent: 6297533 (2001-10-01), Mkhitarian
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6503779 (2003-01-01), Miyazaki
patent: 6518089 (2003-02-01), Coyle
patent: 6534876 (2003-03-01), Glenn
patent: 6576506 (2003-06-01), Shibib

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