Power device having connection structure compensating for...

Details Power device having connection structure compensating for... Power device having connection structure compensating for...

2006-09-12

2008-09-30

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

C330S12400D

Reexamination Certificate

active

07429894

ABSTRACT:
Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

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