Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2011-01-04
2011-01-04
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S154000, C257S174000
Reexamination Certificate
active
07863708
ABSTRACT:
A field effect transistor (FET) includes a source electrode for receiving an externally-provided source voltage. The FET further includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region. During operation, one end of the resistive element is biased to the source voltage.
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Calafut Daniel
Yilmaz Hamza
Dang Phuc T
Fairchild Semiconductor Corporation
Townsend and Townsend / and Crew LLP
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