Power core devices and methods of making thereof

Details Power core devices and methods of making thereof Power core devices and methods of making thereof

2011-03-08

2011-03-08

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S691000, C257S781000, C257SE23030, C257SE23012, C257SE23079, C257SE23142, C257SE23144

Reexamination Certificate

active

07902662

ABSTRACT:
A device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor wherein said embedded singulated capacitor comprises at least a first electrode and a second electrode and wherein said embedded singulated capacitor is positioned on the outer layer of the power core so that at least one Vcc (power) terminal and at least one Vss (ground) terminal of a semiconductor device can be directly connected to at least one first and at least one second electrode, respectively and wherein the first and second electrode of the singulated capacitor is interconnected to the first and second electrode respectively of an external planar capacitor embedded within a printed wiring motherboard.

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Richardson et al., “The Thermodynamics of Substances of Interest in Iron and Steel Making from 0 C to 2400 C”, Journal of the Iron and Steel Institute, 1948, pp. 261-270.

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