Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-08-22
2011-10-04
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S691000, C257S712000, C257SE23080, C257SE29104
Reexamination Certificate
active
08030661
ABSTRACT:
In the case where a chip is made of wide band gap semiconductor, a power conversion apparatus is obtained in which a component having a low heat resistant temperature is prevented from receiving thermal damage by heat generated at the chip. In a configuration including: a chip portion (20) including a chip (21) made of wide band gap semiconductor and a member (22, 23) having a heat resistant temperature equal to or higher than that of the chip (21); and a peripheral component (25) arranged in the vicinity of the chip portion (20) and having a heat resistant temperature lower than that of the chip (21). The chip (21) and the peripheral component (25) are thermally insulated from each other so that the temperature of the peripheral component (25) does not exceed the heat resistant temperature of the peripheral component (25).
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Haga Hitoshi
Kawashima Reiji
Maeda Toshiyuki
Mechi Abdallah
Sakakibara Kenichi
Birch & Stewart Kolasch & Birch, LLP
Blum David S
Daikin Industries Ltd.
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