Power combining cavity

Details Power combining cavity Power combining cavity

1984-03-19

1987-04-07

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330 56, 331107DP, 331107P, H03F 360

Patent

active

046564381

ABSTRACT:
A method and arrangement for enhancing the level of supplied microwave energy including a resonant ring capacitively coupled to a microwave coupling device effective for connecting to a microwave transmission line, the arrangement being mounted in a shield structure. Amplification is effected by IMPATT diodes capacitively coupled to the resonant ring. The microwave coupling device is variably setable with respect to the transfer structure, thereby promoting the establishment of impedance matching therebetween.

REFERENCES:
patent: 3662285 (1972-05-01), Rucker
Huish et al., "A 10 W IMPATT Diode Amplifier for X-band Communication Systems", Conference: Proceedings of the Ninth European Microwave Conference, Microwave 79, Brighton, England, Sep. 17-20, 1979.

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