Power circuit package

Details Power circuit package Power circuit package

1994-04-25

1996-04-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257705, 257746, H01L 2306

Patent

active

055085598

ABSTRACT:
A method for forming a power circuit package (45) having a porous base structure (20) electrically isolated from a first porous die mount (21) and a second porous die mount (22) by a dielectric material (29). The porous base structure (20) is bonded to a second surface of the the dielectric material (29) whereas the first porous die mount (21), and the second porous die mount (22) are bonded to a first surface of the dielectric material (29). Simultaneous with the bonding step, the porous base structure (20), the first porous die mount (21), and the second porous die mount (22) are impregnated with a conductive material. Semiconductor die (32, 33, 34, and 35) are bonded to the impregnated die mounts. The semiconductor die (32, 33, 34, and 35) are then encapsulated by a molding compound.

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"Metal-Matrix Composites for Electronic Packaging" by Carl Zweben, JOM vol. 44, Iss. 7. pp. 15-23, Jul. 1992.
Werdecker et al., "Aluminum Nitride-An Ceramic Substrate for High Power Applications in Microcircuits," IEEE Transactions on Components, hybrids, and Manufacturing Technology, vol. CHMT-7, No. 4, Dec. 1984, pp. 399-404.

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