Power amplifier with harmonically trapped heterojunction bipolar

Details Power amplifier with harmonically trapped heterojunction bipolar Power amplifier with harmonically trapped heterojunction bipolar

1992-12-16

1994-09-13

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including class d amplifier

330286, 330306, H03F 3217

Patent

active

053472292

ABSTRACT:
Power amplifier operating at a fixed frequency or a narrow bandwidth and based upon a non-linear gain element. The power amplifier includes a resonant circuit operably connected to the non-linear gain element, the circuit being resonant at a harmonic of substantially the band center frequency of the non-linear gain element and being arranged to dissipate energy resulting from harmonic generation by the non-linear gain element during signal amplification. In a particular aspect of the power amplifier, resonant circuits comprising inductor-capacitor harmonic trap circuits tuned to different harmonics are placed at both the input and the output of a gallium arsenide heterojunction bipolar transistor HBT providing the non-linear gain element.

REFERENCES:
patent: 4717884 (1988-01-01), Mitzlaff
patent: 5095285 (1992-03-01), Khatibzadeh
patent: 5146178 (1992-09-01), Nojima et al.
patent: 5164683 (1992-11-01), Shields

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