Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2005-03-01
2005-03-01
Mottola, Steven J. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S307000
Reexamination Certificate
active
06861905
ABSTRACT:
A power amplifier system has a high frequency power amplifier circuit section employing source-grounded enhancement type n-channel MESFETs for receiving a drain bias voltage and a gate bias voltage of zero volts or positive low potentials supplied from a unipolar power supply, and amplifying a superposed input signal therewith to output an amplified signal indicative of a change in drain currents. An output matching circuit section applies impedance matching to the amplified signal and outputs the resultant signal. A gate bias voltage circuit section supplies a gate bias voltage to the high frequency power amplifier circuit. When a forward direct current gate voltage is applied to a gate terminal with a source terminal coupled to ground, the DC gate voltage becomes greater than or equal to 0.65 volts, the DC gate voltage causing a gate current value per gate width of 100 micrometers to exceed 100 microamperes.
REFERENCES:
patent: 4777517 (1988-10-01), Onodera et al.
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4808545 (1989-02-01), Balasubramanyam et al.
patent: 5023569 (1991-06-01), Raven
patent: 5105167 (1992-04-01), Peczalski
patent: 5160898 (1992-11-01), Black
patent: 5161235 (1992-11-01), Shur et al.
patent: 5327583 (1994-07-01), Yamada et al.
patent: 5408198 (1995-04-01), Kusunoki
patent: 5411914 (1995-05-01), Chen et al.
patent: 5516725 (1996-05-01), Chang et al.
patent: 5541554 (1996-07-01), Stengel et al.
patent: 5726095 (1998-03-01), Noble
patent: 5757235 (1998-05-01), Fujiwara et al.
patent: 5796286 (1998-08-01), Otaka
patent: 6005267 (1999-12-01), Griffin et al.
patent: 6121841 (2000-09-01), Sakuno
patent: 6127886 (2000-10-01), Khabbaz et al.
patent: 6134424 (2000-10-01), Nishihori et al.
patent: 6545563 (2003-04-01), Smith
patent: 59-95709 (1984-06-01), None
patent: 1-272307 (1989-10-01), None
patent: 8-222973 (1996-08-01), None
patent: 9-8061 (1997-01-01), None
Nikkei Electronics, Nikkei BP Corp., Apr. 16, 1990, No. 497, p. 121.
Kurokawa Atsushi
Yamane Masao
Mattingly Stanger & Malur, P.C.
Mottola Steven J.
Renesas Technology Corp.
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