Power amplifier having low intermodulation distortion

Details Power amplifier having low intermodulation distortion Power amplifier having low intermodulation distortion

1987-03-18

1988-09-27

Laroche, Eugene R.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330195, H03F 316

Patent

active

047744774

ABSTRACT:
Intermodulation distortion in RF FET amplifiers operating in the Class AB mode is reduced without limiting the bandwidth by providing transformer coupled outputs from both the source and drain circuits. The negative feedback provided by the transformer in the source circuit reduces distortion but does not limit bandwidth in the manner of the reactive network normally used for correct phasing in circuits employing drain to gate feedback. Using this technique, the distortion components are typically 40-45 dB below the desired signal when a two-tone test is used, which exceeds the typically available level of 30 dB in prior art circuits.

REFERENCES:
patent: 1912891 (1933-06-01), Drake
patent: 1970325 (1934-08-01), Kreer, Jr.
patent: 2043587 (1936-06-01), Macalpine
patent: 2895019 (1959-07-01), Farber
patent: 3210671 (1965-10-01), Lofting
patent: 3256491 (1966-06-01), Dewey et al.
patent: 3348155 (1967-10-01), Von Recklinghausen
patent: 3595998 (1971-07-01), Fidi et al.
patent: 3716730 (1973-02-01), Cerny, Jr.
patent: 4453131 (1984-06-01), Paullus

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