Power amplifier having high heat dissipation

Details Power amplifier having high heat dissipation Power amplifier having high heat dissipation

2007-04-24

2007-04-24

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S187000, C438S108000

Reexamination Certificate

active

10904027

ABSTRACT:
A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

REFERENCES:
patent: 5349239 (1994-09-01), Sato
patent: 5696466 (1997-12-01), Li
patent: 5793067 (1998-08-01), Miura et al.
patent: 5986324 (1999-11-01), Adlerstein et al.
patent: 6849478 (2005-02-01), Cho et al.
patent: 1077494 (2000-08-01), None
patent: H05-190563 (1993-07-01), None
patent: 2001-060593 (2001-03-01), None

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