Power amplifier having cascode architecture with separately...

Amplifiers – With semiconductor amplifying device – Including plural stages cascaded

Reexamination Certificate

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C330S310000

Reexamination Certificate

active

06995616

ABSTRACT:
A power amplifier includes a transconductance stage, a cascode stage, and may include a signal level detection and bias determination module. The transconductance stage is operable to receive an input voltage signal and to produce an output current signal. The cascode stage communicatively couples to the transconductance stage and is operable to receive the output current signal and to produce an output voltage signal based thereupon. The cascode stage includes a Metal Oxide Silicon (MOS) transistor and a corresponding parasitic bipolar junction transistor, each of the gate of the MOS transistor and the base of the parasitic bipolar junction transistor available for voltage control. The signal level detection and bias determination module operably couples to the cascode stage and is operable to controllably bias the gate of the MOS transistor and to controllably bias the base of the corresponding parasitic bipolar junction transistor.

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patent: 6232848 (2001-05-01), Manku
patent: 6850120 (2005-02-01), Heima et al.
Shoucair F S; “MOS Amplifier Gain-Bandwidth Enhancement Using Body Signals”; Electronics Letters, IEE Stevenage, GB, vol. 27, No. 12, Jun. 6, 1991, pp. 1029-1030, XP000213782; ISSN:0013-5194, p. 1029-p. 1030; figure 1.
Sackinger E et al: “A High-Swing, High-Impedance MOS Cascode Circuit”; IEEE Journal of Solid-State Circuits, IEEE Inc. New York, US, vol. 25 No. 1, Feb. 1, 1990, pp. 289-298, XP000101879; ISSN: 0018-9200, p. 292, left-hand column, line 3-line 13, figures 1, 4.

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