Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1991-05-01
1992-05-05
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330307, 330295, H03F 360
Patent
active
051111578
ABSTRACT:
An octave band decade watt power amplifier is disclosed using compact and efficient MMIC fabrication techniques. The power amplifier is a two stage amplifier in which the driver transistor has two cells, and the power transistor has four cells, with each power cell double the size of the driver cells. Both transistors are of an optimized topology facilitating efficient broad band operation at matchable impedance levels. They are interconnected by three four section impedance matching networks of which the input network is coupled to a 50 ohm signal input terminal. The input and the interstage network are both formed on the same substrate as the transistors. The output network is formed on a separate substrate having a high dielectric constant (i.e. 37) which facilitates efficient and compact matching of four power transistor cells to a single output terminal for connection to a load at the conventional (50 ohm) impedance.
REFERENCES:
patent: 4543535 (1985-09-01), Ayasli
patent: 4788509 (1988-11-01), Bahl et al.
Checkovich Paul
General Electric Company
Jacob Fred
Lang Richard V.
Mottola Steven
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