Power amplifier device

Details Power amplifier device Power amplifier device

2006-11-21

2006-11-21

Jones, Stephen E. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S306000, C333S175000, C257S306000

Reexamination Certificate

active

07138872

ABSTRACT:
The power amplifier device comprises one or more transistors (16) with an output electrode and on top of that a thin-film capacitor. The capacitor comprises a first conductive layer (18), that is also the output terminal of the transistor. It further comprises a first dielectric layer (20) and a second conductive layer (22), that is connected by at least one first connecting wire (30) to said first conductive layer (18). A second connecting wire (34) connects said second conductive layer (22) to an output terminal of the power amplification device (40). In this manner a parallel LC circuit is created, and it is designed such that said parallel LC circuit shows resonance at a harmonic of a frequency (2Fo, 3Fo, 4Fo, 5Fo and so on) amplified by said power amplifier.

REFERENCES:
patent: 5880517 (1999-03-01), Petrosky
patent: 6060951 (2000-05-01), Inoue
patent: 0930653 (1999-07-01), None

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