Amplifiers – With semiconductor amplifying device – Including gain control means
Patent
1996-09-24
1999-01-12
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including gain control means
330289, 455126, 455127, H03G 330
Patent
active
058595678
ABSTRACT:
A power amplifier circuit (200) for amplifying a radio frequency (RF) signal received at an input (208) into an amplified RF signal at an output (210) includes a coupler circuit (222, 122), a second input (206), a power amplifier (218), and a level shifter (228). The coupler circuit (222, 122) is coupled to the output (210) to detect a level of the amplified RF signal. The second input (206) receives a control signal derived from the detected level. The power amplifier (218) includes a transistor (234/236) having a gate (238/240) coupled to the input (208) and a drain (242/244) coupled to the output (210). The level shifter (228) is coupled to the second input (206) and the gate (238/240) and, responsive to the control signal, supplies a biasing voltage (VGG) to the gate (238/240). The level shifter (228) includes circuitry (255) to minimize temperature sensitivity of the biasing voltage (VGG).
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U.S. application No. 08/662551, Applicants: Reif et al., filed Jun. 13, 1996, "Voltage Bias And Temperature Compensation Circuit For Radio Frequency Power Amplifier".
Motorola Inc.
Mullins James B.
Patrick Mark D.
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