Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2007-12-18
2009-08-18
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
Reexamination Certificate
active
07576612
ABSTRACT:
The present invention provides a power amplifier that includes the following: an RF operation transistor3having a base to which an RF signals is inputted, an emitter connected to the ground, and a collector connected to a power supply and a terminal for outputting an RF signal; a current reference transistor12having a collector connected to a reference current source11, an emitter connected to the ground, and a base connected to the base of the RF operation transistor, an operational amplifier22formed of CMOS having one input connected to the collector of the current reference transistor and the other input connected to the base of the RF operation transistor; and a voltage-to-current conversion transistor22for converting the output of the operational amplifier22into a current to be supplied to the base of the RF operation transistor. The power amplifier has low power consumption and an efficient use of chip area, and a current variation due to the relative variation in hFEcan be prevented, so as to be driven with a low power supply voltage.
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patent: 2004/0130392 (2004-07-01), Saito
patent: 2006/0109056 (2006-05-01), Colbeck
patent: 2004-153378 (2004-05-01), None
Ito Junji
Nakamura Shigeki
Hamre Schumann Mueller & Larson P.C.
Nguyen Khiem D
Panasonic Corporation
Pascal Robert
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