Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2006-05-16
2006-05-16
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
Reexamination Certificate
active
07046091
ABSTRACT:
A power amplifier able to minimize the deterioration of the linearity with respect to fluctuations in ambient temperature, wherein a first terminal of a first resistance element and a first terminal of a second resistance with a temperature coefficient smaller than that of the first resistance element are connected, the connection point is connected to a gate terminal of an FET, a second terminal of the first resistance element is connected to a bias voltage supply terminal, a second terminal of the second resistance element is connected to the ground potential, a drain terminal of the FET is connected to a power source voltage supply terminal, a source terminal is connected to the ground potential, and the FET and the first resistance element are constituted by semiconductor devices formed on the same semiconductor substrate.
REFERENCES:
patent: 5659264 (1997-08-01), Ariyoshi et al.
patent: 6087888 (2000-07-01), Inokuchi
patent: 6239625 (2001-05-01), Abe
patent: 6329879 (2001-12-01), Maruyama et al.
patent: 06-120414 (1994-04-01), None
Koimori Toshiyuki
Yamauchi Tomokazu
Kananen Ronald P.
Nguyen Hieu
Pascal Robert
Rader & Fishman & Grauer, PLLC
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