Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2005-03-01
2005-03-01
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S286000
Reexamination Certificate
active
06861907
ABSTRACT:
A power amplifier includes a first amplifier acting as an inverse Class F amplifier and having a first transistor and a first two-tenuinal network, a second amplifier acting as a Class F amplifier and having a second transistor and a second two-terminal network, a power distribution circuit for distributing an input signal to the first transistor and the second transistor such that a phase difference between signals supplied to the first transistor and the second transistor reaches about90degrees, a distributed line for controlling an output load of the first transistor through an impedance transformation based on an operating state of the second transistor, and a bias circuit for biasing the first transistor and the second transistor such that different harmonic processing conditions are set in the first amplifier and the second amplifier.
REFERENCES:
patent: 5420541 (1995-05-01), Upton et al.
patent: 5886575 (1999-03-01), Long
patent: 6320462 (2001-11-01), Alley
patent: 6469581 (2002-10-01), Kobayashi
patent: 6617929 (2003-09-01), Kim et al.
W. H. Doherty, “A New High Efficiency Power Amplifier For Modulated Waves”,Proceedings of the Institute of Radio Engineers, Sep. 1936, pp. 1163-1182, 24(9),Bell Telephone Lab., Inc. New Jersey.
Choe Henry
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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