Postive working multi-level photoresist

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Photomechanical dye image prepared

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430148, 430156, 430191, 430311, 430312, 430326, 430327, 430328, 430329, 430330, G03F 726

Patent

active

048638277

ABSTRACT:
A process for forming a multi-level positive working photosensitive element. One forms a composition containing an alkali soluble resin, an o-quinonediazide compound and an in-situ generated acid catalyzed crosslinker in a solvent mixture. After coating on a substrate, drying and partially cross-linking the first layer, a second positive working light sensitive layer is applied. Each light sensitive layer is activated by u.v. radiation in different parts of the spectrum. The top layer is imagewise exposed and developed to form a mask. The second layer is flood exposed through this mask and developed. Each development is conducted with an aqueous alkaline solution.

REFERENCES:
patent: 2702243 (1955-02-01), Schmidt
patent: 3215529 (1965-11-01), Lindquist et al.
patent: 3313626 (1967-04-01), Whitney
patent: 3353984 (1967-11-01), Landau et al.
patent: 3419370 (1968-12-01), Cramer et al.
patent: 3449103 (1969-06-01), Stookey
patent: 3484241 (1969-12-01), Evleth et al.
patent: 3511653 (1970-05-01), Wiebe
patent: 3679415 (1972-07-01), McNally, Jr.
patent: 3703388 (1972-11-01), Araujo et al.
patent: 3765896 (1973-10-01), Fox
patent: 3873313 (1975-03-01), Horst et al.
patent: 3965278 (1976-06-01), Duinker
patent: 3982439 (1976-09-01), Feng et al.
patent: 4025191 (1977-05-01), Seward
patent: 4028113 (1977-06-01), Sturmer
patent: 4123272 (1978-10-01), Quinn
patent: 4191573 (1980-03-01), Toyama et al.
patent: 4211834 (1980-07-01), Lapadula et al.
patent: 4225661 (1980-09-01), Muzyczko
patent: 4276369 (1981-06-01), Tsuda et al.
patent: 4352870 (1982-10-01), Howard et al.
patent: 4359524 (1982-11-01), Masuda et al.
patent: 4362809 (1982-12-01), Chen et al.
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4373018 (1983-02-01), Reichmanis et al.
patent: 4394437 (1983-07-01), Bergendahl et al.
patent: 4409319 (1983-10-01), Colacino et al.
patent: 4411978 (1983-10-01), Laridon et al.
patent: 4447521 (1984-05-01), Tiers et al.
patent: 4464458 (1984-08-01), Chow et al.
patent: 4504566 (1985-03-01), Dueber
patent: 4524121 (1985-06-01), Gleim et al.
patent: 4533624 (1985-08-01), Sheppard
patent: 4548896 (1985-10-01), Sabongi et al.
patent: 4555471 (1985-11-01), Barzynski et al.
patent: 4557797 (1985-12-01), Fuller et al.
patent: 4563241 (1986-01-01), Tanaka et al.
patent: 4567132 (1986-01-01), Fredericks et al.
patent: 4576901 (1986-03-01), Stahlhofen et al.
patent: 4578344 (1986-03-01), Griffing et al.
patent: 4581323 (1986-04-01), Fisher et al.
patent: 4594312 (1986-06-01), Sabongi et al.
patent: 4600683 (1986-07-01), Greco et al.
patent: 4663275 (1987-05-01), West et al.
patent: 4677049 (1987-06-01), Griffing et al.
patent: 4702996 (1987-10-01), Griffing et al.
patent: 4704347 (1987-11-01), Vollanbrock et al.
patent: 4732836 (1988-05-01), Potvin et al.
patent: 4732837 (1988-05-01), Potvin et al.
Hatzakis, M., "Multilayer Resist Systems for Lithography", Solid State Technology, Aug., 1981.
Ong, E. et al., "Multilayer Resists for Fine Line Optical Lithography," Solid State Technoligy, Jun., 1984, pp. 155-160.
Research Disclosure, Jan. 1979, pp. 22-4, 23, 24.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Postive working multi-level photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Postive working multi-level photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Postive working multi-level photoresist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-242975

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.