Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1995-03-16
1996-06-25
Chu, John S. Y.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430165, 430192, 430193, G03F 7023, G03F 730
Patent
active
055298818
ABSTRACT:
A positive photoresist composition for super fine working is disclosed, which comprises (a) an alkali-soluble resin and (b) as a photosensitive compound the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid ester of a polyhydroxy compound represented by formula (I) or (II), wherein in a high-speed liquid chromatography measured using a ultraviolet ray of 254 nm, the pattern of the diester component and the pattern of the complete ester component of said 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid of the polyhydroxy compound shown by formula (I) or (II) are at least 50% and less than 40%, respectively, of the whole pattern areas; ##STR1## wherein R.sub.1 to R.sub.11, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group, and R.sub.12 to R.sub.22, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.12 to R.sub.22 is a cycloalkyl group. The photoresist composition has a high resolving power and a less layer thickness reliance of the resolving power, and a wide development latitude, is reluctant to form a development residue, and further has a very excellent storage stability, and does not deposit the photosensitive material and does not form microgels with the passage of time.
REFERENCES:
patent: 4123279 (1978-02-01), Kobayashi
patent: 5178986 (1993-01-01), Zampini et al.
patent: 5407778 (1995-04-01), Uetani et al.
patent: 5429095 (1995-07-01), Tan et al.
Aoai Toshiaki
Kawabe Yasumasa
Sato Kenichiro
Uenishi Kazuya
Chu John S. Y.
Fuji Photo Film Co. , Ltd.
LandOfFree
Postive photoresist composition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Postive photoresist composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Postive photoresist composition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2187970