Postexposure baking apparatus for forming fine resist pattern

Details Postexposure baking apparatus for forming fine resist pattern Postexposure baking apparatus for forming fine resist pattern

1995-03-06

1997-05-06

Walberg, Teresa J.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219452, 430325, 430330, H05B 368, G03C 500

Patent

active

056267827

ABSTRACT:
A postexposure baking apparatus which is capable of controlling the dimension of a resist pattern forms the resist pattern without carrying out PEB immediately after exposure. A chemical amplification resist is formed on a wafer. The chemical amplification resist is selectively exposed to form a latent image of a resist pattern. In order to obtain a resist pattern with a prescribed line width or at a desired space, the chemical amplification resist is postexposure-baked by a hot plate under conditions which are decided on the basis of the relation between an elapsed time from the exposure to PEB and change of the line width or the space of the resist pattern as finished as to the chemical amplification resist. The chemical amplification resist is developed to obtain a fine resist pattern.

REFERENCES:
patent: 4212935 (1980-07-01), Canavello et al.
patent: 4281057 (1981-07-01), Casteillani et al.
patent: 5252435 (1993-10-01), Tami et al.
patent: 5300404 (1994-04-01), Tani et al.
patent: 5316891 (1994-05-01), Hashimoto et al.
patent: 5474872 (1995-12-01), Tomo et al.
Przybilla et al., "Delay Time Stable Chemically Amplified Deep UV Resist," SPIE vol. 1925, pp. 76-91 Jan. 1993.
Ohfuji et al., "Dissolution Rate Modeling of a Chemically Amplified Positive Resist." SPIE vol. 1925, ppp. 213-227 Jan. 1993.

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