Fishing – trapping – and vermin destroying
Patent
1994-07-13
1996-05-28
Fourson, George
Fishing, trapping, and vermin destroying
H01L 2144
Patent
active
055211194
ABSTRACT:
A new method of metallization without unwanted precipitates using a tungsten plug is achieved. Semiconductor device structures are formed in and on a semiconductor substrate. A contact hole is opened through an insulating layer to the semiconductor substrate. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. A layer of tungsten is blanket deposited over the glue layer. The tungsten layer is etched back leaving the tungsten only within the contact opening to form a tungsten plug. The etching back leaves impurities on the surface of the glue layer. Those impurities will react with water or air to form precipitates. The precipitates are removed using a wet chemical etch. The substrate is post treated with argon ion sputtering to prevent future formation of precipitates. A second metal layer is deposited over the tungsten plug and the glue layer to complete the tungsten plug metallization without unwanted precipitates in the fabrication of an integrated circuit.
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Horikoshi et al. "Improving EM Lifetime of Alcu/TiN lines and W-Plugs Metal System" Proc. VMIC Conf. Jun. 8-9, 1993 pp. 244-250.
"Improving EM Lifetime of AlCulTiN Lines and W-Plugs Metal System by Controlling Crystal Structure of AlCu", by. H. Horikoshi & T. Nogami, Proceedings of the UMlC Conference, Jun. 8-9, 1993 pp. 244-250.
Chen Shu-Hui
Lee Kuei-Ying
Shih Cheng-Yeh
Zang Wing-Lang
Everhart C.
Fourson George
Pike Rosemary L. S.
Saile George O.
Taiwan Semiconductor Manufacturing Co.
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