Post treatment method for in-situ cleaning

Details Post treatment method for in-situ cleaning Post treatment method for in-situ cleaning

1996-02-22

1997-05-27

Nguyen, Nam

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 67, 438905, B05D 300, H01L 2100

Patent

active

056328214

ABSTRACT:
A method for performing a post treatment effectively in a short period of time after in-situ cleaning for removing residual material remaining in a reaction chamber after a chemical vapor deposition process. The method preferably comprises a post treatment gas containing an element in common with a thin film and reactive with a cleaning gas to form a volatile product being introduced into the reaction chamber by a gas introduction system at such a flow rate that the thin film deposition rate is reaction-limited. The method further comprises plasma forming system forming a plasma by applying electric power to the post treatment gas under the condition that the thin film deposition rate is reaction-limited. The residual cleaning gas reacts with the post treatment gas to form a volatile product which is expelled out by an exhaust system. The cleaning gas is thereby removed without being embedded in the thin film.

REFERENCES:
patent: 3892650 (1975-07-01), Cuomo et al.
patent: 5011705 (1991-04-01), Tanaka
patent: 5326723 (1994-07-01), Petro et al.
Newboe, Betty, "Cluster Tools: A Process Solution?" Semiconductor International, pp. 82-88, Jul., 1990.
Matsuda, A., "Deposition Kinetics of Silicon Films by Plasma CVD," Researches of the Electrotechnical Laboratory, No. 864, pp. 1-64, Apr., 1986.

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