Post-treatment method for dry etching

Details Post-treatment method for dry etching Post-treatment method for dry etching

1997-01-17

2000-07-25

Powell, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 13, 216 92, 438695, B08B 600, H01L 21302

Patent

active

06092537&

ABSTRACT:
In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.

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