Post-titanium nitride mask ROM programming method

Details Post-titanium nitride mask ROM programming method Post-titanium nitride mask ROM programming method

1994-11-23

1996-01-30

Thomas, Tom

Fishing, trapping, and vermin destroying

437 45, 437 48, 437192, H01L 218246

Patent

active

054880092

ABSTRACT:
A method of manufacturing a code pattern on a semiconductor substrate with an array of substantially parallel buried bit lines integral therewith and with word lines above the buried bit lines, includes: forming a titanium nitride layer above the word lines, forming and patterning a code mask above the titanium nitride layer, implanting impurities into the substrate through openings in the code mask to form the code pattern, and performing rapid thermal annealing of the implant. The step height of the titanium nitride layer is employed to form the code identification on the substrate.

REFERENCES:
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 5275959 (1994-01-01), Kobayashi et al.
patent: 5378649 (1995-01-01), Huang

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