Post-polishing cleaning of semiconductor surfaces

Details Post-polishing cleaning of semiconductor surfaces Post-polishing cleaning of semiconductor surfaces

1977-05-23

1978-12-12

Bashore, S. Leon

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

29580, 51323, 134 29, B08B 308

Patent

active

041294572

ABSTRACT:
Semiconductor materials are cleaned after silica polishing by treatment with an aqueous quarternary ammonium salt solution followed by rinsing in water. The treatment coagulates the silica sols and suspends them so that they do not form a film on the semiconductor surface. The treatment preserves the hydrophobic nature of the polished surface.

REFERENCES:
patent: 3342652 (1967-09-01), Reisman et al.
patent: 3345300 (1967-10-01), Speel
Meek et al., J. Electrochem. Soc., "Silicon Surface Contamination : Polishing and Cleaning", vol. 120, No. 9, Sep. 1973, pp. 1241-1242.

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