Post plasma ashing wafer cleaning formulation

Details Post plasma ashing wafer cleaning formulation Post plasma ashing wafer cleaning formulation

1996-07-03

2001-11-27

Einsmann, Margaret (Department: 1751)

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

C510S405000, C510S505000, C134S001200, C134S001300

Reexamination Certificate

active

06323168

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations that are utilized to remove residue from wafers following a resist plasma ashing step.
2. Description of the Prior Art
The prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a resist ashing step. Generally, these prior art chemical formulations include strong reagents such as strong acids, strong bases and/or highly reactive amine containing compounds. Such strong reagents can cause unwanted further removal of metal or insulator layers remaining on the wafer and are therefore undesirable in many instances. A particular problem with strippers containing both amine component(s) and water is corrosion of metal, particularly aluminum and aluminum-copper alloys. There is therefore a need for chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
SUMMARY OF THE INVENTION
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
chelating agent
1-15%
water
25-99% 
polar organic solvent
0-60%
In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).
It is an advantage of the present invention that it effectively removes inorganic residues following a plasma ashing step.
It is another advantage of the present invention that it effectively removes metal halide and metal oxide residues following plasma ashing.
It is a further advantage of the present invention that it effectively removes inorganic residue from a semiconductor wafer following plasma ashing without containing a strong acid, strong base and/or amine containing compound.


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Kern, “Overview and evolution of semiconductor wafer contamination and cleaning technology”, pp. 3-67 in Kern, ed., Hndbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, Westwood, New Jersey, 1993.*
Handbook of Chemistry and Physics, fortieth edition, edited by Hodgman et al., 1958.*
Industrial Solvents Handbook, ed by Flick, definition of bubyrolactone, 1998.*
Handbook of Chemistry and Physics, p 1198, 1199 40th ed., 1958.

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