Post-planarization, pre-oxide removal ozone treatment

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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Details

697745, 697753, 697756, H01L 2100, B08B 304

Patent

active

061001988

ABSTRACT:
Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching.

REFERENCES:
patent: 4749640 (1988-06-01), Tremont et al.
patent: 5516730 (1996-05-01), Saeed et al.
patent: 5626681 (1997-05-01), Nakano et al.
patent: 5803980 (1998-09-01), Pas et al.
patent: 5837662 (1998-11-01), Chai et al.
Wolf, Stanley, Ph.D. and Tauber, Richard N., Ph.D., "Wet Processing: Cleaning, Etching, and Liftoff", Silicone Processing For The VLSI Era, vol. 1, Process Technology, Lattice Press, 15:514-520, 1986.

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