Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-09-09
2008-09-09
Pham, Thanhha (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000, C257S760000, C257S773000, C257SE23141
Reexamination Certificate
active
07423346
ABSTRACT:
A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
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Co-pending U.S. Patent App. MEG-00-608C, U.S. Appl. No. 10/303,451, filed Nov. 25, 2002, assigned to the same assignee.
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Chou Chien-Kang
Chou Chiu-Ming
Lin Mou-Shiung
Ackerman Stephen B.
Megica Corporation
Pham Thanhha
Pike Rosemary L. S.
Saile Ackerman LLC
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